Self-heating of submicrometer InP-InGaAs DHBTs

被引：8

作者：

Houtsma, VE ^{[1
]}

Chen, J ^{[1
]}

Frackoviak, J ^{[1
]}

Hu, I ^{[1
]}

Kopf, RF ^{[1
]}

Reyes, RR ^{[1
]}

Tate, A ^{[1
]}

Yang, Y ^{[1
]}

Weimann, NG ^{[1
]}

Chen, YK ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 06期

关键词：

device simulations; heterojunction bipolar transistor (HBT); InP; ion-implanted subcollector; submicrometer; emitter; thermal resistance;

D O I：

10.1109/LED.2004.828975

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the thermal properties of submicron InP-InGaAs-InP double heterojunction bipolar transistors (DHBTs) with emitter dimensions of A = 0.25 x 4 mum(2). From the temperature dependence of V-be, we measured a thermal resistance of R-th = 3.3 degrees C/mW for DHBTs with ion-implanted n(+) -InP subcollector at room temperature, compared to a high R-th = 7.5degrees C/mW from DHBTs with conventional grown InGaAs subcollector. Two-dimensional device simulations confirm the measured results.

引用

页码：357 / 359

页数：3

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