Metastability of Si1-yCy epilayers under 2 MeV α-particle irradiation

被引:1
作者
Berti, M
De Salvador, D
Drigo, AV
Petrovich, M
Stangl, J
Schäffler, F
Zerlauth, S
Bauer, G
Armigliato, A
机构
[1] Univ Padua, INFM, I-35131 Padua, Italy
[2] Univ Padua, Dept Phys, I-35131 Padua, Italy
[3] Univ Linz, Inst Semicond Phys, A-4040 Linz, Austria
[4] CNR, Ist Lamel, I-40129 Bologna, Italy
关键词
Rutherford backscattering spectroscopy; channeling; Si1-yCy; alloy; radiation damage;
D O I
10.1016/S0968-4328(99)00095-5
中图分类号
TH742 [显微镜];
学科分类号
摘要
In this work we present some recent results concerning the cr-particles irradiation of Si1-yCy alloy epitaxially grown on silicon. The study of the damage process is interesting because of the extensive use of backscattering technique as a tool of characterisation of this kind of materials and because of the possibility of adding information about the transformations that this metastable material undergoes. We point out that the irradiation damage process causes a change in the material structure different from that due to the thermal treatments. The irradiation damage occurs at a rate much higher than in Si, however it involves only a silicon atom fraction that appears to be proportional to the substitutional carbon content. (C) 2000 Elsevier Science Ltd. All rights resented.
引用
收藏
页码:285 / 289
页数:5
相关论文
共 11 条
[1]   QUANTIFICATION OF CARBON IN SI1-X-YGEXCY WITH UNIFORM PROFILES [J].
BAIR, AE ;
ATZMON, Z ;
RUSSELL, SW ;
ALFORD, TL ;
MAYER, JW ;
BARBOUR, JC .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 103 (03) :339-346
[2]   Lattice parameter in Si1-yCy epilayers:: Deviation from Vegard's rule [J].
Berti, M ;
De Salvador, D ;
Drigo, AV ;
Romanato, F ;
Stangl, J ;
Zerlauth, S ;
Schaffer, F ;
Bauer, G .
APPLIED PHYSICS LETTERS, 1998, 72 (13) :1602-1604
[3]   12C(α,α)12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures [J].
Berti, M ;
De Salvador, D ;
Drigo, AV ;
Romanato, F ;
Sambo, A ;
Zerlauth, S ;
Stangl, J ;
Schaffler, F ;
Bauer, G .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 143 (03) :357-370
[4]   INVESTIGATION OF THE HIGH-TEMPERATURE BEHAVIOR OF STRAINED SI1-YCY/SI HETEROSTRUCTURES [J].
FISCHER, GG ;
ZAUMSEIL, P ;
BUGIEL, E ;
OSTEN, HJ .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) :1934-1937
[5]   CROSS-SECTIONS FOR 170.5-DEGREES BACKSCATTERING OF HE-4 FROM CARBON FOR HE-4 ENERGIES BETWEEN 1.6 AND 5.0 MEV [J].
LEAVITT, JA ;
MCINTYRE, LC ;
STOSS, P ;
ODER, JG ;
ASHBAUGH, MD ;
DEZFOULYARJOMANDY, B ;
YANG, ZM ;
LIN, Z .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 40-1 :776-779
[6]   FORMATION OF BETA-SIC NANOCRYSTALS BY THE RELAXATION OF SI1-YCY RANDOM ALLOY LAYERS [J].
POWELL, AR ;
LEGOUES, FK ;
IYER, SS .
APPLIED PHYSICS LETTERS, 1994, 64 (03) :324-326
[7]   Infrared spectroscopy of strained Si1-yCy alloys (0<=y<=0.015) grown on silicon [J].
Pressel, K ;
Fischer, GG ;
Zaumseil, P ;
Kim, M ;
Osten, HJ .
THIN SOLID FILMS, 1997, 294 (1-2) :133-136
[8]   Micropipes and voids at beta-SiC/Si(100) interfaces: An electron microscopy study [J].
Scholz, R ;
Gosele, U ;
Niemann, E ;
Wischmeyer, F .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1997, 64 (02) :115-125
[9]   PRECIPITATION AND RELAXATION IN STRAINED SI1-YCY/SI HETEROSTRUCTURES [J].
STRANE, JW ;
STEIN, HJ ;
LEE, SR ;
PICRAUX, ST ;
WATANABE, JK ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) :3656-3668
[10]   Advanced column-IV epitaxial materials for silicon-based optoelectronics [J].
Sturm, JC .
MRS BULLETIN, 1998, 23 (04) :60-64