Advanced column-IV epitaxial materials for silicon-based optoelectronics

被引:24
作者
Sturm, JC [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, Ctr Photon & Optoelect, Princeton, NJ 08544 USA
关键词
D O I
10.1557/S0883769400030281
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:60 / 64
页数:5
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[1]   ENGINEERING THE FUTURE OF ELECTRONICS [J].
ABSTREITER, G .
PHYSICS WORLD, 1992, 5 (03) :36-39
[2]   Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace [J].
Ahlgren, DC ;
Gilbert, M ;
Greenberg, D ;
Jeng, SJ ;
Malinowski, J ;
NguyenNgoc, D ;
Schonenberg, K ;
Stein, K ;
Groves, R ;
Walter, K ;
Hueckel, G ;
Colavito, D ;
Freeman, G ;
Sunderland, D ;
Harame, DL ;
Meyerson, B .
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :859-862
[3]   PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY [J].
BEAN, JC ;
SHENG, TT ;
FELDMAN, LC ;
FIORY, AT ;
LYNCH, RT .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :102-104
[4]   BAND-EDGE AND DEEP-LEVEL PHOTOLUMINESCENCE OF PSEUDOMORPHIC SI1-X-YGEXCY ALLOYS [J].
BOUCAUD, P ;
FRANCIS, C ;
JULIEN, FH ;
LOURTIOZ, JM ;
BOUCHIER, D ;
BODNAR, S ;
LAMBERT, B ;
REGOLINI, JL .
APPLIED PHYSICS LETTERS, 1994, 64 (07) :875-877
[5]   Near-band-edge photoluminescence from pseudomorphic Si1-gamma C gamma/Si quantum well structures [J].
Brunner, K ;
Eberl, K ;
Winter, W .
PHYSICAL REVIEW LETTERS, 1996, 76 (02) :303-306
[6]   Effect of carbon on the valence band offset of Si1-x-yGexCy/Si heterojunctions [J].
Chang, CL ;
StAmour, A ;
Sturm, JC .
IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :257-260
[7]   The effect of carbon on the valence band offset of compressively strained Si1-x-yGexCy/(100) Si heterojunctions [J].
Chang, CL ;
StAmour, A ;
Sturm, JC .
APPLIED PHYSICS LETTERS, 1997, 70 (12) :1557-1559
[8]   THEORETICAL INVESTIGATION OF RANDOM SI-C ALLOYS [J].
DEMKOV, AA ;
SANKEY, OF .
PHYSICAL REVIEW B, 1993, 48 (04) :2207-2214
[9]   LATTICE DISTORTION IN A STRAIN-COMPENSATED SI1-X-YGEXCY LAYER ON SILICON [J].
DIETRICH, B ;
OSTEN, HJ ;
RUCKER, H ;
METHFESSEL, M ;
ZAUMSEIL, P .
PHYSICAL REVIEW B, 1994, 49 (24) :17185-17190
[10]   GROWTH AND STRAIN COMPENSATION EFFECTS IN THE TERNARY SI1-X-YGEXCY ALLOY SYSTEM [J].
EBERL, K ;
IYER, SS ;
ZOLLNER, S ;
TSANG, JC ;
LEGOUES, FK .
APPLIED PHYSICS LETTERS, 1992, 60 (24) :3033-3035