Oxide Nanoelectronics on Demand

被引：427

作者：

Cen, Cheng ^{[1
]}

Thiel, Stefan ^{[2
]}

Mannhart, Jochen ^{[2
]}

Levy, Jeremy ^{[1
]}

机构：

[1] Univ Pittsburgh, Dept Phys & Astron, Pittsburgh, PA 15260 USA

[2] Univ Augsburg, Ctr Elect Correlat & Magnetism, Inst Phys, D-86135 Augsburg, Germany

来源：

SCIENCE | 2009年 / 323卷 / 5917期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1126/science.1168294

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Electronic confinement at nanoscale dimensions remains a central means of science and technology. We demonstrate nanoscale lateral confinement of a quasi-two-dimensional electron gas at a lanthanum aluminate-strontium titanate interface. Control of this confinement using an atomic force microscope lithography technique enabled us to create tunnel junctions and field-effect transistors with characteristic dimensions as small as 2 nanometers. These electronic devices can be modified or erased without the need for complex lithographic procedures. Our on-demand nanoelectronics fabrication platform has the potential for widespread technological application.

引用

页码：1026 / 1030

页数：5

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