Etching characteristics of tin oxide thin films in argon-chlorine radio frequency plasmas

被引:9
作者
Maguire, P [1 ]
Molloy, J [1 ]
Laverty, SJ [1 ]
McLaughlin, J [1 ]
机构
[1] UNIV ULSTER, NO IRELAND BIOENGN CTR, JORDANSTOWN BT37 1QB, NORTH IRELAND
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 06期
关键词
D O I
10.1116/1.580164
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We have developed an etch process suitable for high resolution transparent conductive oxide patterning with high etch rates, up to 70 nm/min, and applicability to large area flat panel display substrates. It was found that the addition of small amounts of Cl-2 significantly enhanced the etch rate compared to addition of pure argon but that beyond 25% Cl-2 the rate tended to fall. There is a significant loading effect where the etch rate approximately doubled for exposed tin oxide areas between 80% and 10% of the substrate area. This loading sensitivity was found to increase with increasing power and decreasing Cl-2 concentration. It was also observed that local changes in pattern dimensions affected the uniformity of the etch rate. A large photoresist etch rate was observed between one and three times that of the tin oxide and it decreased as the area of photoresist coverage increased. Linewidth loss, up to 4 mu m at high powers, was overcome using improved ultraviolet exposure, leading to feature resolution capabilities of <5 mu m. Etch rate inhomogeneity was also observed on a local scale, possibly due to redeposition of sputtered photoresist. Overetching, however, ensures rapid clearing of tin oxide islands without damage to the underlying SiO2 buffer layer. (C) 1996 American Vacuum Society.
引用
收藏
页码:3010 / 3016
页数:7
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