Equilibrium distributions of shallow-level impurity and potential in the near-surface region of a semiconductor in a model with a completely depleted layer

被引：4

作者：

Gavrilovets, VV ^{[1
]}

Bondarenko, VB ^{[1
]}

Kudinov, YA ^{[1
]}

Korablev, VV ^{[1
]}

机构：

[1] St Petersburg State Tech Univ, St Petersburg 195251, Russia

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 04期

关键词：

Magnetic Material; Electromagnetism; Active Defect; Equilibrium Distribution; Semiconductor Layer;

D O I：

10.1134/1.1188004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A model of completely depleted layer was used to derive analytical expressions for equilibrium distributions of shallow-level impurity, electric field, and potential in the near-surface region of a semiconductor. The results of calculation were used to estimate the variation in the parameters of a finite-size structure. It was found that, in the approximation used, it was possible to reduce the concentration of electrically active defects by several times for semiconductor layers similar to 1 mu m thick. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：441 / 444

页数：4

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