COMPUTER CALCULATIONS OF IMPURITY PROFILES IN SILICON .1.

被引：14

作者：

NUYTS, W ^{[1
]}

VANOVERS.R ^{[1
]}

机构：

[1] KATHOLIEKE UNIV LOUVAIN,DEPT ELEKTROTECH,BRUSSELS,BELGIUM

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 15卷 / 01期

关键词：

D O I：

10.1002/pssa.2210150137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：329 / 341

页数：13

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