Comprehensive static characterization of vertical electrostatically actuated polysilicon beams

被引：14

作者：

Chan, EK ^{[1
]}

Garikipati, K ^{[1
]}

Dutton, RW ^{[1
]}

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

IEEE DESIGN & TEST OF COMPUTERS | 1999年 / 16卷 / 04期

关键词：

D O I：

10.1109/54.808212

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Vertical electrostatically actuated polysilicon beams are characterized through electrical and optical measurements. The extrapolated behavior of a dual-bias-electrode structure serves as a CAD tool benchmark.

引用

页码：58 / 65

页数：8

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