Enhanced conversion efficiency in wide-bandgap GaNP solar cells

被引：22

作者：

Sukrittanon, S. ^{[1
]}

Liu, R. ^{[2
]}

Ro, Y. G. ^{[2
]}

Pan, J. L. ^{[2
]}

Jungjohann, K. L. ^{[3
]}

Tu, C. W. ^{[1
,2
]}

Dayeh, S. A. ^{[1
,2
]}

机构：

[1] Univ Calif San Diego, Grad Program Mat Sci & Engn, La Jolla, CA 92037 USA

[2] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92037 USA

[3] Sandia Natl Labs, Ctr Integrated Nanotechnol, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 15期

基金：

美国国家科学基金会;

关键词：

GALLIUM-PHOSPHIDE; GAP;

D O I：

10.1063/1.4933317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we demonstrate similar to 2.05 eV dilute nitride GaNP solar cells on GaP substrates for potential use as the top junction in dual-junction integrated cells on Si. By adding a small amount of N into indirect-bandgap Gal), GaNP has several extremely important attributes: a direct-bandgap that is also tunable, and easily attained lattice-match with Si. Our best GaNP solar cell ([N] similar to 1.8%, E-g similar to 2.05 eV) achieves an efficiency of 7.9%, even in the absence of a window layer. This GaNP solar cell's efficiency is 3x higher than the most efficient GaP solar cell to date and higher than other solar cells with similar direct bandgap (InGaP, GaAsP). Through a systematic study of the structural, electrical, and optical properties of the device, efficient broadband optical absorption and enhanced solar cell performance are demonstrated. (C) 2015 AlP Publishing LLC.

引用

页数：5

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