Wide range tunable laterally coupled distributed-feedback lasers based on InGaAs-GaAs quantum dots

被引：24

作者：

Müller, M

Klopf, F

Kamp, M

Reithmaier, JP

Forchel, A

机构：

[1] Nanoplus Nanosyst & Technol GmbH, D-97218 Gerbrunn, Germany

[2] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 09期

关键词：

distributed-feedback lasers; gain coupling; multisection diode lasers; semiconductor lasers; tunable lasers;

D O I：

10.1109/LPT.2002.801103

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have investigated tunable distributed-feedback (DFB) lasers based on InGaAs quantum dots grown by molecular beam epitaxy. Two-section tunable DFB lasers were fabricated by patterning laterally gain coupling binary superimposed gratings perpendicular to the ridge waveguide. Side-mode suppression ratios of up to 40 dB have been achieved. The tuning range covers 30 nm.

引用

收藏

页码：1246 / 1248

页数：3

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