Growth stages of chemical vapor deposited diamond on the titanium alloy Ti-6Al-4V

被引:28
作者
Grogler, T [1 ]
Zeiler, E [1 ]
Dannenfeldt, M [1 ]
Rosiwal, SM [1 ]
Singer, RF [1 ]
机构
[1] UNIV ERLANGEN NURNBERG,LEHRSTUHL KORROS & OBERFLACHENTECH,D-91058 ERLANGEN,GERMANY
关键词
growth states; titanium alloy;
D O I
10.1016/S0925-9635(97)00042-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
CVD-diamond films were deposited onto the titanium alloy Ti-6Al-4V. Samples were investigated in a ground and ultrasonically pretreated stage and after different times of deposition. The coating time was varied between I and 210 min. SEM, XPS and Micro Raman spectroscopy were used to characterize different stages of deposition. A model describing the process of chemical vapor deposition of diamond onto Ti-6Al-4V is developed. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:1658 / 1667
页数:10
相关论文
共 18 条
[1]  
[Anonymous], 1988, HIGH TEMPERATURE OXI
[2]   RAMAN-SPECTRA OF DIAMOND AT HIGH-PRESSURES [J].
BOPPART, H ;
VANSTRAATEN, J ;
SILVERA, IF .
PHYSICAL REVIEW B, 1985, 32 (02) :1423-1425
[3]  
BOSZO F, 1984, J VAC SCI TECHNOL A, V2, P1271
[4]  
Chastain J., 1992, HDB XRAY PHOTOELECTR, V40, P221
[5]  
GROGLER T, P 5 INT C PLASM SURF
[6]   RAMAN-SCATTERING INDUCED BY CARBON VACANCIES IN TICX [J].
KLEIN, MV ;
HOLY, JA ;
WILLIAMS, WS .
PHYSICAL REVIEW B, 1978, 17 (04) :1546-1556
[7]   COMPARISON AMONG XAES, PELS AND XPS TECHNIQUES FOR EVALUATION OF SP2 PERCENTAGE IN A-C-H [J].
LASCOVICH, JC ;
SCAGLIONE, S .
APPLIED SURFACE SCIENCE, 1994, 78 (01) :17-23
[8]   MODIFICATION OF SURFACE BAND BENDING OF DIAMOND BY LOW-ENERGY ARGON AND CARBON ION-BOMBARDMENT [J].
LAU, WM ;
HUANG, LJ ;
BELLO, I ;
YIU, YM ;
LEE, ST .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (07) :3385-3391
[9]  
Massalsky T.B., 1986, Binary Alloy Phase Diagrams, V1-3
[10]   THE INFLUENCE OF ORIENTED GROWTH ON THE SURFACE-ROUGHNESS OF CVD DIAMOND FILMS [J].
NORGARD, C ;
ESKILDSEN, SS ;
MATTHEWS, A .
SURFACE & COATINGS TECHNOLOGY, 1995, 74-5 (1-3) :358-361