The electronic structure and transmission characteristics of disordered AlGaAs nanowires

被引:17
作者
Boykin, Timothy B. [1 ]
Luisier, Mathieu
Schenk, Andreas
Kharche, Neerav
Klimeck, Gerhard
机构
[1] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA
[2] ETH, Integrated Syst Lab, CH-8092 Zurich, Switzerland
[3] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[4] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
基金
美国国家科学基金会;
关键词
nanotechnology; quantum effect semiconductor devices; quantum wires;
D O I
10.1109/TNANO.2006.886776
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Perfect nanowires may be studied from both the bandstructure and transmission perspectives, and relating features in one set of curves to those in another often yields much insight into their behavior. For random-alloy nanowires, however, only transmission characteristics and virtual-crystal approximation (VCA) bands have been available. This is a serious shortcoming since the VCA cannot properly capture disorder at the primitive cell level: those bulk properties which it can satisfactorily reproduce arise from spatially extended states and measurements which average out primitive cell-level fluctuations. Here we address this deficiency by projecting approximate bands out of supercell states for Al0.15Ga0.85 As random alloy nanowires. The resulting bands correspond to the transmission characteristics very closely, unlike the VCA bands, which cannot explain important transmission features. Using both bandstructure and transmission results, we are better able to explain the operation of these nanowires.
引用
收藏
页码:43 / 47
页数:5
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