A novel process for fabricating conformal and stable TiN-based barrier

被引：10

作者：

Lu, JP ^{[1
]}

Hsu, WY ^{[1
]}

Hong, QZ ^{[1
]}

Dixit, GA ^{[1
]}

Luttmer, JD ^{[1
]}

Havemann, RH ^{[1
]}

Magel, LK ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,MAT SCI LAB,DALLAS,TX 75243

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 12期

关键词：

D O I：

10.1149/1.1837295

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new process for preparing TiN-based barrier films is reported. The process consists of thermal decomposition of a metallorganic precursor, tetrakis(dimethylamino)-titanium, followed by postdeposition annealing in silane ambient. Thin films fabricated using this approach have much higher stability and lower resistivity than those prepared using thermal decomposition alone. The new barrier films are conformal and exhibit good barrier performance for Al metallization.

引用

页码：L279 / L280

页数：2

共 8 条

[1]

DIXIT GA, 1995, P VLSI MULT INT VMIC, P175

[2] TICN - A NEW CHEMICAL-VAPOR-DEPOSITED CONTACT BARRIER METALLIZATION FOR SUBMICRON DEVICES [J].