COMPARISON OF CHEMICAL-VAPOR-DEPOSITION OF TIN USING TETRAKIS-DIETHYLAMINO-TITANIUM AND TETRAKIS-DIMETHYLAMINO-TITANIUM

The attributes and limitations of chemically vapor-deposited titanium nitride films from the reaction of tetrakis-diethylamino-titanium with ammmonia and tetrakis-dimethylamino-titanium with ammonia are discussed. Deposited films were characterized by growth rate, resistivity, surface morphology and step coverage over contact structures. Films deposited without ammonia flow were unstable in the atmosphere and Auger analysis showed a higher relative carbon content. It was found that the deposition pressure had a stronger effect than did the deposition temperature on the bulk resistivity and surface roughness. A higher pressure has a tendency to reduce the resistivity. Films appear smooth at low deposition temperatures and low pressures. Films become rough at high deposition temperatures and high pressures. The deposition process and resulting TiN layers are successfully integrated in a chemcially vapor-deposited W plus fill application.