THE INFLUENCE OF AMMONIA ON RAPID-THERMAL LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITED TINX FILMS FROM TETRAKIS (DIMETHYLAMIDO) TITANIUM PRECURSOR ONTO INP

被引：35

作者：

KATZ, A

FEINGOLD, A

NAKAHARA, S

PEARTON, SJ

LANE, E

GEVA, M

STEVIE, FA

JONES, K

机构：

[1] AT&T BELL LABS, BREINIGSVILLE, PA 18031 USA

[2] AT&T BELL LABS, ALLENTOWN, PA 18103 USA

[3] UNIV FLORIDA, GAINESVILLE, FL 32611 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 02期

关键词：

D O I：

10.1063/1.351271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The process kinetics, chemical composition, morphology, microstructures, and stress of rapid-thermal low pressure metalorganic chemical vapor deposited (RT-LPMOCVD) TiN(x) films on InP, using a combined reactive chemistry of ammonia (NH3) gas and tetrakis (dimethylamido) titanium (DMATi) liquid precursors, were studied. Enhanced deposition rates of 1-3 nm s-1 at total chamber pressures in the range of 3-10 Torr and temperatures of 300-degrees-C-350-degrees-C at a NH3:DMATi flow rate ratio of 1:8 to 1:15 were achieved. Stoichiometric film compositions were obtained, with carbon and oxygen impurity concentrations as low as 5%. Transmission electron microscopy analysis identified the deposited films as TiN with some epitaxial relationship to the underlying (001) InP substrate. This process provides a superior film to the preview RT-LPMOCVD TiN(x) film deposited using only the DMATi precursor.

引用

页码：993 / 1000

页数：8

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