NOVEL SELF-ALIGNED W/TIN/TISI2 CONTACT STRUCTURE FOR VERY SHALLOW JUNCTIONS AND INTERCONNECTIONS

被引：15

作者：

JOSHI, RV

MOY, D

BRODSKY, S

CHARAI, A

KRUSINELBAUM, L

RESTLE, PJ

NGUYEN, TN

OH, CS

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 17期

关键词：

D O I：

10.1063/1.101300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1672 / 1674

页数：3

共 14 条

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SHUKLA, RK .

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[4]

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[5]

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[6]

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[7] NOVEL SUBMICROMETER MOS DEVICES BY SELF-ALIGNED NITRIDATION OF SILICIDE [J].

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[8]

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[9]

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[10]

OHBA T, 1987, DEC P IEEE IEDM, P213

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