PROPERTIES OF TISI2 AS AN ENCROACHMENT BARRIER FOR THE GROWTH OF SELECTIVE TUNGSTEN ON SILICON

被引：8

作者：

CHEN, SS

SIVARAM, S

SHUKLA, RK

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 06期

关键词：

D O I：

10.1116/1.583655

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1730 / 1735

页数：6

共 15 条

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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) : C37 - C49
[6] SELECTIVE LPCVD TUNGSTEN FOR CONTACT BARRIER APPLICATIONS
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[7] MILLER NE, 1980, SOLID STATE TECHNOL, V23, P79
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[9] MURARKA SP, 1986, P ELECTROCHEM SOC S, V86, P297
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