High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

被引：206

作者：

Hong, X. ^{[1
]}

Posadas, A. ^{[2
]}

Zou, K. ^{[1
]}

Ahn, C. H. ^{[2
]}

Zhu, J. ^{[1
]}

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 13期

基金：

美国国家科学基金会;

关键词：

CARBON NANOTUBES; ELECTRON; GAAS;

D O I：

10.1103/PhysRevLett.102.136808

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The carrier mobility mu of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO2 substrate is replaced by single-crystal epitaxial Pb(Zr0.2Ti0.8)O-3 (PZT). In the electron-only regime of the FLG, mu reaches 7x10(4) cm(2)/V s at 300 K for n=2.4x10(12)/cm(2), 70% of the intrinsic limit set by longitudinal acoustic (LA) phonons; it increases to 1.4x10(5) cm(2)/V s at low temperature. The temperature-dependent resistivity rho(T) reveals a clear signature of LA phonon scattering, yielding a deformation potential D=7.8 +/- 0.5 eV.

引用

页数：4

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