A study of MIMIM on-chip capacitor using Cu/SiO2 interconnect technology

被引：14

作者：

Chen, Z ^{[1
]}

Guo, LH ^{[1
]}

Yu, MB ^{[1
]}

Zhang, Y ^{[1
]}

机构：

[1] Inst Microelect, Dept Deep Submicron Integrated Circuit Proc Integ, Singapore 117685, Singapore

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2002年 / 12卷 / 07期

关键词：

capacitors; CMOS integrated circuits; interconnections; metal-insulator-metal devices; very-high-frequency devices; yield estimation;

D O I：

10.1109/LMWC.2002.801132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, metal-insulator-metal-insulator-metal (MIMIM) on-chip capacitor is fabricated newly using CU/SiO(2) backend technology. Capacitance density 1.7 fF/mum(2) has been achieved with satisfactory dc and RF characteristics. Compared with conventional metal-insulator-metal (MIM) capacitor, MIMIM doubles the capacitance density without weakening capacitor's quality in both dc and RF characteristics. And, its yield is predictable. Therefore, it has been approved to be a convenient and reliable method to improve capacitance density for on-chip standard Cu/SiO(2) backend technology.

引用

页码：246 / 248

页数：3

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