Preparation of TaN thin film by H2 plasma assisted atomic layer deposition using tert-butylimino-tris-ethylmethylamino tantalum

被引：30

作者：

Kim, Deung-Kwan

Kim, Bo-Hye

Woo, Hee-Gweon

Kim, Do-Heyoung ^{[1
]}

Shin, Hyun Koock

机构：

[1] Chonnam Natl Univ, Fac Appl Chem Engn, Kwangju 500757, South Korea

[2] Chonnam Natl Univ, Res Inst Catalysis, Kwangju 500757, South Korea

[3] Chonnam Natl Univ, Dept Chem, Kwangju 500757, South Korea

[4] Chonnam Natl Univ, Nanotechnol Res Ctr, Kwangju 500757, South Korea

[5] UP Chem Co Ltd, Pyongtaek 459050, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2006年 / 6卷 / 11期

关键词：

atomic layer deposition; nano thin film; plasma; TaN; DIFFUSION BARRIER; TIN FILMS; CU; TECHNOLOGY; MORPHOLOGY;

D O I：

10.1166/jnn.2006.018

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The plasma assisted atomic layer deposition (ALD) of tantalum nitride (TaN) thin films were conducted using tert-butylimino-tris-ethylmethylamino tantalum (TBTEMAT) and hydrogen plasma at 250 degrees C. The effects of H-2-plasma pulse time and RF power on the film properties, such as resistivity, surface roughness, step coverage and stability in air, were examined. The film growth rate (thickness/cycle) was in the range of 0.05-0.08 nm/cycle and the resistivity of the films varied from 490 to 70000 mu Omega cm, depending on the plasma conditions. Longer plasma pulse times and increasing RF power yielded films of lower resistivity along with improving the stability. The films were smooth and the conformality of the films deposited in 0.28 mu m holes with an aspect ratio of 7: 1 was 100%.

引用

页码：3392 / 3395

页数：4

共 21 条

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