Finite element modeling of piezoresponse in nanostructured ferroelectric films

被引:62
作者
Li, JH [1 ]
Chen, L [1 ]
Nagarajan, V [1 ]
Ramesh, R [1 ]
Roytburd, AL [1 ]
机构
[1] Univ Maryland, Dept Mat & Nucl Engn, Mat Res Sci & Engn Ctr, College Pk, MD 20742 USA
关键词
D O I
10.1063/1.1695641
中图分类号
O59 [应用物理学];
学科分类号
摘要
Patterning thin ferroelectric films into discrete islands is an effective way to release the constraint imposed by a substrate and the unpoled nonpiezoactive surrounding film to enhance the film piezoresponse. The converse piezoresponse measured by the surface displacement of ferroelectric islands, with lateral size changing from a nanoscale to a continuous film, has been modeled using three-dimensional finite element method. The modeling has shown that piezodeformation of the islands results in a local deformation of a substrate in the vicinity of island. The deformation is larger when the substrate is softer. The deformation, together with clamping strain in the film, decreases the effective d(33) of the film island. The effect of the top electrode on d(33) measured by surface displacement is also modeled. The piezoresponse of different size island capacitors with PbZr0.5Ti0.5O3/SrTiO3/Si and PbZr0.2Ti0.8O3/SrTiO3 heterostructures has been calculated. The results of modeling are in good agreement with experimental data on d(33) obtained by piezoresponse force microscopy. (C) 2004 American Institute of Physics.
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收藏
页码:2626 / 2628
页数:3
相关论文
共 8 条
[1]   Piezoelectric response of thin films determined by charge integration technique: Substrate bending effects [J].
Barzegar, A ;
Damjanovic, D ;
Ledermann, N ;
Muralt, P .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (08) :4756-4760
[2]   Size effect in mesoscopic epitaxial ferroelectric structures:: Increase of piezoelectric response with decreasing feature size [J].
Bühlmann, S ;
Dwir, B ;
Baborowski, J ;
Muralt, P .
APPLIED PHYSICS LETTERS, 2002, 80 (17) :3195-3197
[3]   MEASUREMENT OF PIEZOELECTRIC COEFFICIENTS OF FERROELECTRIC THIN-FILMS [J].
LEFKI, K ;
DORMANS, GJM .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1764-1767
[4]   Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si [J].
Nagarajan, V ;
Stanishevsky, A ;
Chen, L ;
Zhao, T ;
Liu, BT ;
Melngailis, J ;
Roytburd, AL ;
Ramesh, R ;
Finder, J ;
Yu, Z ;
Droopad, R ;
Eisenbeiser, K .
APPLIED PHYSICS LETTERS, 2002, 81 (22) :4215-4217
[5]   Measurement of internal stresses via the polarization in epitaxial ferroelectric films [J].
Roytburd, AL ;
Alpay, SP ;
Nagarajan, V ;
Ganpule, CS ;
Aggarwal, S ;
Williams, ED ;
Ramesh, R .
PHYSICAL REVIEW LETTERS, 2000, 85 (01) :190-193
[6]   Pieezoresponse of constrained ferroelectric films [J].
Roytburd, AL .
INTEGRATED FERROELECTRICS, 2001, 38 (1-4) :763-768
[7]  
STEINHAUSEN R, 1998, P 11 IEEE INT S APPL, P93
[8]   Longitudinal piezoelectric coefficient measurement for bulk ceramics and thin films using pneumatic pressure rig [J].
Xu, F ;
Chu, F ;
Trolier-McKinstry, S .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :588-594