Tunable thermal conductivity of Si1-xGex nanowires

被引：111

作者：

Chen, Jie ^{[1
,2
]}

Zhang, Gang ^{[3
]}

Li, Baowen ^{[1
,2
,4
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Natl Univ Singapore, Ctr Computat Sci & Engn, Singapore 117542, Singapore

[3] Inst Microelect, Singapore 117685, Singapore

[4] NUS Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 07期

关键词：

Ge-Si alloys; localised states; molecular dynamics method; nanowires; phonons; reduction (chemical); semiconductor materials; semiconductor quantum wires; thermal conductivity; MOLECULAR-DYNAMICS SIMULATION; SILICON NANOWIRES; THERMOELECTRIC-MATERIALS; TEMPERATURE; SUPERLATTICES; GERMANIUM; FILMS; MERIT;

D O I：

10.1063/1.3212737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using molecular dynamics simulation, we demonstrate that the thermal conductivity of silicon-germanium nanowires (Si1-xGex NWs) depends on the composition remarkably. The thermal conductivity reaches the minimum, which is about 18% of that of pure Si NW, when Ge content is 50%. More interesting, with only 5% Ge atoms (Si0.95Ge0.05 NW), SiNW's thermal conductivity is reduced to 50%. The reduction of thermal conductivity mainly comes from the localization of phonon modes due to random scattering. Our results demonstrate that Si1-xGex NW might have promising application in thermoelectrics.

引用

页数：3

共 37 条

[1] Vibrations and thermal transport in nanocrystalline silicon [J].

Bodapati, Arun ;

Schelling, Patrick K. ;

Phillpot, Simon R. ;

Keblinski, Pawel .

PHYSICAL REVIEW B, 2006, 74 (24)

[2] Silicon nanowires as efficient thermoelectric materials [J].

Boukai, Akram I. ;

Bunimovich, Yuri ;

Tahir-Kheli, Jamil ;

Yu, Jen-Kan ;

Goddard, William A., III ;

Heath, James R. .

NATURE, 2008, 451 (7175) :168-171

[3] Breakdown of Fourier's law in nanotube thermal conductors [J].

Chang, C. W. ;

Okawa, D. ;

Garcia, H. ;

Majumdar, A. ;

Zettl, A. .

PHYSICAL REVIEW LETTERS, 2008, 101 (07)

[4]

CHEN G, 2006, ENCY NANOSCIENCE NAN, V7, P429

[5] MOLECULAR-DYNAMICS SIMULATION OF AMORPHOUS-GERMANIUM [J].

DING, KJ ;

ANDERSEN, HC .

PHYSICAL REVIEW B, 1986, 34 (10) :6987-6991

[6] THERMAL + ELECTRICAL PROPERTIES OF HEAVILY DOPED GE-SI ALLOYS UP TO 1300 DEGREES K [J].

DISMUKES, JP ;

EKSTROM, E ;

BEERS, DS ;

STEIGMEIER, EF ;

KUDMAN, I .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (10) :2899-&

[7] New directions for low-dimensional thermoelectric materials [J].

Dresselhaus, Mildred S. ;

Chen, Gang ;

Tang, Ming Y. ;

Yang, Ronggui ;

Lee, Hohyun ;

Wang, Dezhi ;

Ren, Zhifeng ;

Fleurial, Jean-Pierre ;

Gogna, Pawan .

ADVANCED MATERIALS, 2007, 19 (08) :1043-1053

[8] Molecular dynamics simulation of thermal conductivity of nanoscale thin silicon films [J].

Feng, XL ;

Li, ZX ;

Guo, ZY .

MICROSCALE THERMOPHYSICAL ENGINEERING, 2003, 7 (02) :153-161

[9] THERMOELECTRIC FIGURE OF MERIT OF A ONE-DIMENSIONAL CONDUCTOR [J].

HICKS, LD ;

DRESSELHAUS, MS .

PHYSICAL REVIEW B, 1993, 47 (24) :16631-16634

[10] Enhanced thermoelectric performance of rough silicon nanowires [J].

Hochbaum, Allon I. ;

Chen, Renkun ;

Delgado, Raul Diaz ;

Liang, Wenjie ;

Garnett, Erik C. ;

Najarian, Mark ;

Majumdar, Arun ;

Yang, Peidong .

NATURE, 2008, 451 (7175) :163-U5

← 1 2 3 4 →