Tunable thermal conductivity of Si1-xGex nanowires

被引：111

作者：

Chen, Jie ^{[1
,2
]}

Zhang, Gang ^{[3
]}

Li, Baowen ^{[1
,2
,4
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[2] Natl Univ Singapore, Ctr Computat Sci & Engn, Singapore 117542, Singapore

[3] Inst Microelect, Singapore 117685, Singapore

[4] NUS Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 07期

关键词：

Ge-Si alloys; localised states; molecular dynamics method; nanowires; phonons; reduction (chemical); semiconductor materials; semiconductor quantum wires; thermal conductivity; MOLECULAR-DYNAMICS SIMULATION; SILICON NANOWIRES; THERMOELECTRIC-MATERIALS; TEMPERATURE; SUPERLATTICES; GERMANIUM; FILMS; MERIT;

D O I：

10.1063/1.3212737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By using molecular dynamics simulation, we demonstrate that the thermal conductivity of silicon-germanium nanowires (Si1-xGex NWs) depends on the composition remarkably. The thermal conductivity reaches the minimum, which is about 18% of that of pure Si NW, when Ge content is 50%. More interesting, with only 5% Ge atoms (Si0.95Ge0.05 NW), SiNW's thermal conductivity is reduced to 50%. The reduction of thermal conductivity mainly comes from the localization of phonon modes due to random scattering. Our results demonstrate that Si1-xGex NW might have promising application in thermoelectrics.

引用

页数：3

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