Dissipative tunneling and orthogonality catastrophe in molecular transistors

被引:19
作者
Braig, S [1 ]
Flensberg, K
机构
[1] Cornell Univ, Atom & Solid State Phys Lab, Ithaca, NY 14853 USA
[2] Niels Bohr Inst fAPG, Orsted Lab, DK-2100 Copenhagen, Denmark
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.70.085317
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transport through molecular devices with weak tunnel coupling to the leads but with strong coupling to a single vibrational mode is considered in the case where the vibration is damped by coupling to the environment. In particular, we investigate what influence the electrostatic coupling of the charge on the molecule to the vibrational modes of the environment has on the I-V characteristics. We find that, for comparable characteristic length scales of the van der Waals and electrostatic interaction of the molecule with the environmental vibrational modes, the I-V characteristics are qualitatively changed from what one would expect from orthogonality catastrophe and develop a steplike discontinuity at the onset of conduction. For the case of very different length scales, we recover dissipation consistent with modeling the electrostatic forces as an external influence on the system comprised of molecule and substrate, which implies the appearance of orthogonality catastrophe, in accord with previous results.
引用
收藏
页码:085317 / 1
页数:8
相关论文
共 24 条
[1]  
AJI V, CONDMAT0302222
[2]  
Ashcroft N.W., 1976, SOLID STATE PHYS, P437
[3]   Influence of nanomechanical properties on single-electron tunneling: A vibrating single-electron transistor [J].
Boese, D ;
Schoeller, H .
EUROPHYSICS LETTERS, 2001, 54 (05) :668-674
[4]   Vibrational sidebands and dissipative tunneling in molecular transistors [J].
Braig, S ;
Flensberg, K .
PHYSICAL REVIEW B, 2003, 68 (20)
[5]   EFFECT OF THE ELECTROMAGNETIC ENVIRONMENT ON THE COULOMB BLOCKADE IN ULTRASMALL TUNNEL-JUNCTIONS [J].
DEVORET, MH ;
ESTEVE, D ;
GRABERT, H ;
INGOLD, GL ;
POTHIER, H ;
URBINA, C .
PHYSICAL REVIEW LETTERS, 1990, 64 (15) :1824-1827
[6]   Tunneling broadening of vibrational sidebands in molecular transistors [J].
Flensberg, K .
PHYSICAL REVIEW B, 2003, 68 (20)
[7]   QUANTUM FLUCTUATIONS AND THE SINGLE-JUNCTION COULOMB BLOCKADE [J].
GIRVIN, SM ;
GLAZMAN, LI ;
JONSON, M ;
PENN, DR ;
STILES, MD .
PHYSICAL REVIEW LETTERS, 1990, 64 (26) :3183-3186
[8]   Decay of mesoscopically localized vibrational eigenstates in porous materials [J].
Gurevich, VL ;
Schober, HR .
PHYSICAL REVIEW B, 1998, 57 (18) :11295-11302
[9]  
Jackson J D, 1999, CLASSICAL ELECTRODYN
[10]   Kondo resonance in a single-molecule transistor [J].
Liang, WJ ;
Shores, MP ;
Bockrath, M ;
Long, JR ;
Park, H .
NATURE, 2002, 417 (6890) :725-729