Composition and temperature dependence of electron band structure in ZnSe1-xSx

被引:68
作者
Kassali, K
Bouarissa, N [1 ]
机构
[1] Univ Msila, Dept Phys, Msila 28000, Algeria
[2] Univ Setif, Dept Phys, Setif 19000, Algeria
关键词
ZnSe and ZnS; pseudo-potential method; electron band structure;
D O I
10.1016/S0254-0584(01)00546-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using the empirical pseudo-potential method combined with the improved virtual crystal approximation where compositional disorder is included as an effective potential, we report on the results of composition and temperature-dependent optical band gaps, of the ZnSe1-xSx (0 less than or equal to x less than or equal to 1) type alloys. The obtained results compare reasonably well with the available experimental data. The fundamental band gap is found to vary non-linearly with composition, showing a bowing. Similar bowing is also observed from the temperature-dependent fundamental band gap. This bowing decreases with increasing temperature over the range 0-200 K, but it increases gradually on going from 200 to 300 K. The expression E-g(x, T) = 2.828 + 0.45x + 0.53x(2) + T(-3.45x(2) + 3.22x - 3.88) x 10(-4) was obtained from the data can be used to obtain the energy gap as a function of x and T over a large range of these variables. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:255 / 261
页数:7
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