Nanowire-based multiple quantum dot memory

被引：42

作者：

Nilsson, Henrik A. ^{[1
]}

Thelander, Claes ^{[1
]}

Froeberg, Linus E. ^{[1
]}

Wagner, Jakob B. ^{[1
]}

Samuelson, Lars ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期

关键词：

D O I：

10.1063/1.2362594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors propose and demonstrate an alternative memory concept in which a storage island is connected to a nanowire containing a stack of nine InAs quantum dots, each separated by thin InP tunnel barriers. Transport through the quantum dot structure is suppressed for a particular biasing window due to misalignment of the energy levels. This leads to hysteresis in the charging/discharging of the storage island. The memory operates for temperatures up to around 150 K and has write times down to at least 15 ns. A comparison is made to a nanowire memory based on a single, thick InP barrier.

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页数：3

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