Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots

被引：64

作者：

Zhang, L ^{[1
]}

Boggess, TF

Deppe, DG

Huffaker, DL

Shchekin, OB

Cao, C

机构：

[1] Univ Iowa, Dept Phys & Astron, Opt Sci & Technol Ctr, Iowa City, IA 52242 USA

[2] Univ Texas, Ctr Microelect Res, Dept Elect & Comp Engn, Austin, TX 78712 USA

[3] Univ Iowa, Dept Elect & Comp Engn, Iowa City, IA 52242 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 10期

关键词：

D O I：

10.1063/1.125991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature-dependent dynamic response of 1.3-mu m-InGaAs/GaAs quantum dots is investigated using time-resolved photoluminescence upconversion with subpicosecond temporal resolution for excitation in either the GaAs bulk region surrounding the dots or within the wetting layer. Relaxation to the quantum-dot ground state occurs on a time scale as short as 1 ps, while radiative lifetimes as short as 400 ps are measured. The influence of nonradiative recombination is observed only for temperatures above 250 K. At temperatures below 77 K, an increase in the relaxation time and lifetime is observed when carriers are injected into the bulk GaAs region versus excitation into the wetting layer, which suggests that diffusion in the bulk GaAs region influences both the relaxation rate and the recombination rate. (C) 2000 American Institute of Physics. [S0003-6951(00)01010-X].

引用

页码：1222 / 1224

页数：3

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