Germanium telluride nanowires and nanohelices with memory-switching behavior

被引：112

作者：

Yu, Dong ^{[1
]}

Wu, Junqiao ^{[1
]}

Gu, Qian ^{[1
]}

Park, Hongkun ^{[1
]}

机构：

[1] Harvard Univ, Dept Chem & Biol Chem, Cambridge, MA 02138 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2006年 / 128卷 / 25期

关键词：

D O I：

10.1021/ja0625071

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the synthesis of single-crystalline GeTe nanowires (NWs) and nanohelices (NHs) using a vapor transport method assisted by metal catalysts. The NWs have typical diameters of 65 ± 20 nm and lengths reaching up to 50 μm, while NHs have an average helix diameter of 135 ± 30 nm, with widely varying pitches. Electron microscopy and diffraction measurements show that these NWs and NHs are single crystalline and exhibit a rhombohedral structure. The devices incorporating individual GeTe NWs exhibit nonvolatile resistance changes associated with voltage-driven crystalline-amorphous transitions, suggesting that these NWs can be the basis of an electrically driven nonvolatile memory. Copyright © 2006 American Chemical Society.

引用

页码：8148 / 8149

页数：2

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