Tunneling magnetoresistance and induced domain structure in Al2O3-based junctions

被引：21

作者：

Hehn, M

Lenoble, O

Lacour, D

Féry, C

Piécuch, M

Tiusan, C

Ounadjela, K

机构：

[1] Univ Nancy 1, CNRS, UMR 7556, Phys Mat Lab, F-54506 Vandoeuvre Nancy, France

[2] Inst Phys & Chim Mat Strasbourg, F-67037 Strasbourg, France

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.61.11643

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetization reversal in sputtered Co and oxidized Co (CoOx) layers an studied using transport measurements and magneto-optic Kerr effect. When associated in a magnetic tunnel junction, the two magnetic layers show a strong ferromagnetic coupling. Using the tunnel magnetoresistive effect as a probe for micromagnetic studies, we show the existence of an unexpected domain structure in the soft Co layer. This domain structure originates from the duplication of the domain structure of the hard CoOx magnetic layer template into the soft Co layer via the ferromagnetic coupling.

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页码：11643 / 11648

页数：6

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