Thin film dielectrics for electronics using combustion chemical vapor deposition

被引：4

作者：

Lin, WY ^{[1
]}

Huang, H ^{[1
]}

Cullen, DK ^{[1
]}

Shoup, SS ^{[1
]}

Cousins, D ^{[1
]}

Schmitt, JJ ^{[1
]}

Hunt, AT ^{[1
]}

Romanofsky, RR ^{[1
]}

VanKeuls, FW ^{[1
]}

Miranda, FA ^{[1
]}

Mueller, CH ^{[1
]}

机构：

[1] MicroCoating Technol, Chamblee, GA 30341 USA

来源：

MULTICOMPONENT OXIDE FILMS FOR ELECTRONICS | 1999年 / 574卷

关键词：

D O I：

10.1557/PROC-574-371

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This payer reviewed work to date on multicomponent oxides deposited, utilizing open-atmosphere Combustion Chemical Vapor Deposition for electronic applications. Epitaxial barium strontium titanate and strontium titanate thin films were deposited on(100) MgO single crystal substrates. They were patterned to form interdigitated structures far electrically tunable devices, namely, coupled microstripline phase shifters (CMPS). The undoped, as-deposited perovskite dielectrics exhibited a figure of merit of 53 degrees/dB at 20 GHz and 23 degrees C, indicating high degree of tunability and fairly low loss. High-permittivity (epsilon=263), polycrystalline BST and SrTiO3 were studied for dynamic random access memory, and leakage current density of 10(-7) A/cm(2) was measured. Intended for non-volatile ferroelectric memory, lead zirconium titanate was deposited onto a seed layer of perovskite structure to prevent the growth of the unwanted pyrochlore phase. To function as buffer layers for superconductor applications, epitaxial CeO2, YSZ, SrTiO3, LaAlO3, Y2O3, and Yb2O3 coatings on single crystal and textured nickel substrate were investigated. Electronic analyses and characterization, using SEM, EDS, XRD, and X-ray pole figures, were presented.

引用

页码：371 / 376

页数：6

共 8 条

[1]

Carter W, 1997, US patent, Patent No. 5652021

[2] Chemical vapor deposition of electroceramic thin films [J].