Chemical vapor deposition of electroceramic thin films

被引:58
作者
deKeijser, M
Dormans, GJM
机构
关键词
D O I
10.1557/S0883769400046066
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:37 / 43
页数:7
相关论文
共 12 条
[1]  
DEKEIJSER M, 1993, MATER RES SOC S P, V310, P223
[2]   COMPOSITION-CONTROLLED GROWTH OF PBTIO3 ON SRTIO3 BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].
DORMANS, GJM ;
VANVELDHOVEN, PJ ;
DEKEIJSER, M .
JOURNAL OF CRYSTAL GROWTH, 1992, 123 (3-4) :537-544
[3]   CHEMICAL VAPOR-DEPOSITION OF RUTHENIUM AND RUTHENIUM DIOXIDE FILMS [J].
GREEN, ML ;
GROSS, ME ;
PAPA, LE ;
SCHNOES, KJ ;
BRASEN, D .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2677-2685
[4]   SINGLE SOURCE MOCVD OF EPITAXIAL OXIDE THIN-FILMS [J].
HISKES, R ;
DICAROLIS, SA ;
JACOWITZ, RD ;
LU, Z ;
FEIGELSON, RS ;
ROUTE, RK ;
YOUNG, JL .
JOURNAL OF CRYSTAL GROWTH, 1993, 128 (1-4) :781-787
[5]   STEP COVERAGE AND ELECTRICAL-PROPERTIES OF (BA, SR)TIO3 FILMS PREPARED BY LIQUID SOURCE CHEMICAL-VAPOR-DEPOSITION USING TIO(DPM)(2) [J].
KAWAHARA, T ;
YAMAMUKA, M ;
MAKITA, T ;
NAKA, J ;
YUUKI, A ;
MIKAMI, N ;
ONO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5129-5134
[6]   MOCVD OF BASRTIO3 FOR ULSI DRAMS [J].
KIRLIN, P ;
BILODEAU, S ;
VANBUSKIRK, P .
INTEGRATED FERROELECTRICS, 1995, 7 (1-4) :307-318
[7]  
MCMILLAN LD, 1992, 4TH P INT S INT FERR, P666
[8]  
MYHRA S, 1990, MATER RES SOC SYMP P, V169, P999
[9]  
OKADA M, 1989, Patent No. 4792463
[10]  
Vossen JL, 1978, THIN FILM PROCESSES