Nanometer-scale conversion of Si3N4 to SiOx

被引：77

作者：

Chien, FSS

Chang, JW

Lin, SW

Chou, YC

Chen, TT

Gwo, S ^{[1
]}

Chao, TS

Hsieh, WF

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

[2] Ntl Nano Device Lab, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[4] Natl Chiao Tung Univ, Ctr Measurement Stand, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 03期

关键词：

D O I：

10.1063/1.125754

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It has been found that atomic force microscope (AFM) induced local oxidation is an effective way for converting thin (< 5 nm) Si3N4 films to SiOx. The threshold voltage for the 4.2 nm film is as low as 5 V and the initial growth rate is on the order of 10(3) nm/s at 10 V. Micro-Auger analysis of the selectively oxidized region revealed the formation of SiOx. Due to the large chemical selectivity in various etchants and great thermal oxidation rate difference between Si3N4, SiO2, and Si, AFM patterning of Si3N4 films can be a promising method for fabricating nanoscale structures. (C) 2000 American Institute of Physics. [S0003-6951(00)03003-5].

引用

页码：360 / 362

页数：3

共 14 条

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