Colossal magnetoresistance materials-based junctions with antiferromagnetic insulating barriers

被引：9

作者：

Alldredge, LMB ^{[1
]}

Suzuki, Y

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1771815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated epitaxial La0.7Sr0.3MnO3/La0.35Ca0.65MnO3/La0.7Sr0.3MnO3 trilayer magnetic tunnel junctions in order to produce high-quality interfaces through the use of an isostructural barrier layer. The barrier we have chosen (La0.35Ca0.65MnO3) is an antiferromagnetic insulator with a Neel temperature of similar to160 K. We observed junction magnetoresistances (JMRs) of up to 4% at 5 K. The large energy cost to flip a spin in an antiferromagnet preserves some degree of spin orientation during transport through the junctions. However, magnetic coupling between the electrode and the barrier inevitably suppresses the JMR. Despite the magnetic coupling, an antiferromagnetic barrier does not suppress the JMR completely. (C) 2004 American Institute of Physics.

引用

页码：437 / 439

页数：3

共 15 条

[11]

Rao CNR, 1998, COLOSSAL MAGNETORESISTANCE, CHARGE ORDERING AND RELATED PROPERTIES OF MANGANESE OXIDES, P1

[12] Temperature and bias dependence of magnetoresistance in doped manganite thin film trilayer junctions [J].

Sun, JZ ;

Abraham, DW ;

Roche, K ;

Parkin, SSP .

APPLIED PHYSICS LETTERS, 1998, 73 (07) :1008-1010

[13] Low-field colossal magnetoresistance in manganite tunnel spin valves [J].

Viret, M ;

Drouet, M ;

Nassar, J ;

Contour, JP ;

Fermon, C ;

Fert, A .

EUROPHYSICS LETTERS, 1997, 39 (05) :545-549

[14] NEUTRON DIFFRACTION STUDY OF THE MAGNETIC PROPERTIES OF THE SERIES OF PEROVSKITE-TYPE COMPOUNDS [(1-X)LA,XCA]MNO3 [J].

WOLLAN, EO ;

KOEHLER, WC .

PHYSICAL REVIEW, 1955, 100 (02) :545-563

[15] Near-room-temperature tunneling magnetoresistance in a trilayer La0.67Sr0.33MnO3/La0.85Sr0.15MnO3/La0.67Sr0.33MnO3 device [J].

Yin, HQ ;

Zhou, JS ;

Goodenough, JB .

APPLIED PHYSICS LETTERS, 2000, 77 (05) :714-716

← 1 2 →