Near-room-temperature tunneling magnetoresistance in a trilayer La0.67Sr0.33MnO3/La0.85Sr0.15MnO3/La0.67Sr0.33MnO3 device

被引：25

作者：

Yin, HQ ^{[1
]}

Zhou, JS ^{[1
]}

Goodenough, JB ^{[1
]}

机构：

[1] Univ Texas, Texas Mat Inst, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 05期

关键词：

D O I：

10.1063/1.127095

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A trilayer La0.67Sr0.33MnO3/La0.85Sr0.15MnO3/La0.67Sr0.33MnO3 tunneling magnetoresistance (TMR) device has been epitaxially produced on a SrTiO3 substrate. The current-voltage curves show that tunneling process dominates the carrier transfer across the junction near room temperature. However, the tunneling effect becomes weak with decreasing temperature. Magnetoresistance of about 4%-6% has been observed below room temperature. The temperature dependence of TMR appears correlated to both the tunneling effect cross the junction and the spin polarization in La0.67Sr0.33MnO3 layers. The temperature dependence of the TMR effect in this device is different from that of other devices based on colossal magnetoresistance materials. (C) 2000 American Institute of Physics. [S0003-6951(00)01431-5].

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页码：714 / 716

页数：3

相关论文

共 11 条

[1] Structure-properties phase diagram for La1-xSrxMnO3 (0.1≤x≤0.2) [J].

Dabrowski, B ;

Xiong, X ;

Bukowski, Z ;

Dybzinski, R ;

Klamut, PW ;

Siewenie, JE ;

Chmaissem, O ;

Shaffer, J ;

Kimball, CW ;

Jorgensen, JD ;

Short, S .

PHYSICAL REVIEW B, 1999, 60 (10) :7006-7017

[2]

GUINCA F, 1999, PHYS REV B, V58, P9212

[3] Intergrain magnetoresistance via second-order tunneling in perovskite manganites [J].

Lee, S ;

Hwang, HY ;

Shraiman, BI ;

Ratcliff, WD ;

Cheong, SW .

PHYSICAL REVIEW LETTERS, 1999, 82 (22) :4508-4511

[4] Large magnetotunneling effect at low magnetic fields in micrometer-scale epitaxial La0.67Sr.033MnO3 tunnel junctions [J].

Lu, Y ;

Li, XW ;

Gong, GQ ;

Xiao, G ;

Gupta, A ;

Lecoeur, P ;

Sun, JZ ;

Wang, YY ;

Dravid, VP .

PHYSICAL REVIEW B, 1996, 54 (12) :R8357-R8360

[5] Tunneling magnetoresistance in mixed-valence manganite tunnel junctions [J].

Lyu, P ;

Xing, DY ;

Dong, JM .

PHYSICAL REVIEW B, 1998, 58 (01) :54-57

[6] Optimum tunnel barrier in ferromagnetic-insulator-ferromagnetic tunneling structures [J].

Moodera, JS ;

Gallagher, EF ;

Robinson, K ;

Nowak, J .

APPLIED PHYSICS LETTERS, 1997, 70 (22) :3050-3052

[7] Tunneling magnetoresistance at up to 270 K in La0.8Sr0.2MnO3/SrTiO3/La0.8Sr0.2MnO3 junctions with 1.6-nm-thick barriers [J].

Obata, T ;

Manako, T ;

Shimakawa, Y ;

Kubo, Y .

APPLIED PHYSICS LETTERS, 1999, 74 (02) :290-292

[8]

SIMMONS JG, 1969, TUNNELING PHENOMENA, pCH10

[9] INSULATOR-METAL TRANSITION AND GIANT MAGNETORESISTANCE IN LA1-XSRXMNO3 [J].

URUSHIBARA, A ;

MORITOMO, Y ;

ARIMA, T ;

ASAMITSU, A ;

KIDO, G ;

TOKURA, Y .

PHYSICAL REVIEW B, 1995, 51 (20) :14103-14109

[10] Current distribution effects in magnetoresistive tunnel junctions [J].

vandeVeerdonk, RJM ;

Nowak, J ;

Meservey, R ;

Moodera, JS ;

deJonge, WJM .

APPLIED PHYSICS LETTERS, 1997, 71 (19) :2839-2841