Lithographic band gap tuning in photonic band gap crystals

被引：47

作者：

Cheng, CC ^{[1
]}

Scherer, A ^{[1
]}

ArbetEngels, V ^{[1
]}

Yablonovitch, E ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90024

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期

关键词：

D O I：

10.1116/1.588601

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the lithographic control over the spectral response of three-dimensional photonic crystals. By precise microfabrication of the geometry using a reproducible and reliable procedure consisting of electron beam lithography followed by dry etching, we have shifted the conduction band of crystals within the near-infrared. Such microfabrication has enabled us to reproducibly define photonic crystals with lattice parameters ranging from 650 to 730 nm. In GaAs semiconductor wafers, these can serve as high-reflectivity (>95%) mirrors, Here, we show the procedure used to generate these photonic crystals and describe the geometry dependence of their spectral response. (C) 1996 American Vacuum Society.

引用

页码：4110 / 4114

页数：5

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