Conformability of ruthenium dioxide films prepared on substrates with capacitor holes by MOCVD and modification by annealing

被引：15

作者：

Kawano, Kazuhisa ^{[1
]}

Kosuge, Hiroaki

Oshima, Noriaki

Funakubo, Hiroshi

机构：

[1] Tosoh Corp, Tokyo Res Lab, Ayase, Kanagawa 2521123, Japan

[2] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2006年 / 9卷 / 11期

关键词：

D O I：

10.1149/1.2336992

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ruthenium dioxide (RuO2) films were prepared at 180-400 degrees C on SiO2/SiN/Si substrates with capacitor holes having an aspect ratio of 3.5 by metallorganic chemical vapor deposition (MOCVD) using (2,4-dimethylpentadienyl) (ethylcyclopentadienyl) ruthenium [Ru(DMPD)(EtCp)] as a Ru source. Conformal film deposition above 86% was ascertained at 200 degrees C. Postannealing at 500 and 600 degrees C under atmospheric N-2 flow improved the film crystallinities and resistivities without any degradation of the conformability. (c) 2006 The Electrochemical Society.

引用

页码：C175 / C177

页数：3

共 17 条

[1] Chemical vapor deposition of Ru and its application in (Ba,Sr)TiO3 capacitors for future dynamic random access memories [J].

Aoyama, T ;

Kiyotoshi, M ;

Yamazaki, S ;

Eguchi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B) :2194-2199

[2] Low-temperature growth of RuO2 films for conductive electrode applications [J].

Fröhlich, K ;

Cambel, V ;

Machajdík, D ;

Baumann, PK ;

Lindner, J ;

Schumacher, M ;

Juergensen, H .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2002, 5 (2-3) :173-177

[3] Chemical vapor deposited RuOx films:: annealing effects [J].

Ganesan, PG ;

Shpilman, Z ;

Eizenberg, M .

THIN SOLID FILMS, 2003, 425 (1-2) :163-170

[4] CHEMICAL VAPOR-DEPOSITION OF RUTHENIUM AND RUTHENIUM DIOXIDE FILMS [J].

GREEN, ML ;

GROSS, ME ;

PAPA, LE ;

SCHNOES, KJ ;

BRASEN, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2677-2685

[5] Seed layer free conformal ruthenium film deposition on hole substrates by MOCVD using (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium [J].

Kawano, Kazuhisa ;

Nagai, Atsushi ;

Kosuge, Hiroaki ;

Shibutami, Tetsuo ;

Oshima, Noriaki ;

Funakubo, Hiroshi .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (07) :C107-C109

[6] Effects of an added iodine Source(C2H5I)on Ru metal-organic CVD [J].

Kim, JJ ;

Kim, MS ;

Yoon, DY .

CHEMICAL VAPOR DEPOSITION, 2003, 9 (02) :105-109

[7] Deposition of Ru and RuO2 thin films employing dicarbonyl bis-diketonate ruthenium complexes as CVD source reagents [J].

Lai, YH ;

Chen, YL ;

Chi, Y ;

Liu, CS ;

Carty, AJ ;

Peng, SM ;

Lee, GH .

JOURNAL OF MATERIALS CHEMISTRY, 2003, 13 (08) :1999-2006

[8] Comparison of (Ba,Sr)TiO3 thin films from metallorganic chemical vapor deposition with Ti(dmae)4 and Ti(i-OPr)2(tmhd)2 as Ti sources [J].

Lee, JH ;

Kim, JY ;

Rhee, SW .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 1999, 2 (10) :507-509

[9]

LEE JM, 1998, J VAC SCI TECHNOL A, V16, P5

[10] Characteristics of ruthenium films prepared by chemical vapor deposition using bis(ethylcyclopentadienyl) ruthenium precursor [J].

Matsui, Y ;

Hiratani, M ;

Nabatame, T ;

Shimamoto, Y ;

Kimura, S .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (01) :C18-C21

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