Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

被引：6

作者：

Lee, KP ^{[1
]}

Pearton, SJ

Overberg, ME

Abernathy, CR

Wilson, RG

Chu, SNG

Theodoropolou, N

Hebard, AF

Zavada, JM

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Agere Syst, Murray Hill, NJ 07974 USA

[3] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

[4] USA, Res Off, Res Triangle Pk, NC 27709 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 05期

关键词：

GaN; ferromagnetism; dilute magnetic semiconductors; ion implantation;

D O I：

10.1007/s11664-002-0093-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In p-GaN implanted with Mn (3 X 10(16) cm(-2) at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely GaxMn1-xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.

引用

页码：411 / 415

页数：5

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