Controlled growth of single nanowires within a supported alumina template

被引:25
作者
Vlad, A.
Matefi-Tempfli, M.
Faniel, S.
Bayot, V.
Melinte, S.
Piraux, L.
Matefi-Tempfli, S.
机构
[1] Univ Catholique Louvain, Unite Physicochim & Phys Mat, B-1348 Louvain, Belgium
[2] Univ Catholique Louvain, Unite Disposit Integres & Circuits Elect, B-1348 Louvain, Belgium
关键词
D O I
10.1088/0957-4484/17/19/016
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A simple technique for fabricating single nanowires with well-defined position is presented. The process implies the use of a silicon nitride mask for selective electrochemical growth of the nanowires in a porous alumina template. We show that this method allows the realization of complex nanowire patterns as well as arrays of single nanowires with a precise position and spacing.
引用
收藏
页码:4873 / 4876
页数:4
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