Field emission study of SiC nanowires/nanorods directly grown on SiC ceramic substrate

被引：90

作者：

Deng, S. Z.

Li, Z. B.

Wang, W. L.

Xu, N. S. ^{[1
]}

Zhou, Jun

Zheng, X. G.

Xu, H. T.

Chen, Jun

She, J. C.

机构：

[1] Sun Yat Sen Zhongshan Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

[2] Sun Yat Sen Zhongshan Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

[3] Sun Yat Sen Zhongshan Univ, Sch Phys & Engn, Guangdong Province Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 02期

基金：

中国国家自然科学基金;

关键词：

SILICON-CARBIDE NANOWIRES;

D O I：

10.1063/1.2220481

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single crystalline silicon carbide (SiC) nanowires were grown directly on the surface of bulk SiC ceramic substrate in a catalyst-assisted thermal heating process. The morphology of the nanowire film and the diameter of nanowires were found to be sensitive to the thickness of catalyst film and both of them had a strong effect on field emission performance. Very low turn-on and threshold fields for electron emission were observed with, SiC nanowires of small diameter. A model is proposed to qualitatively explain the field emission findings, which assumes the occurrence of an insulator-to-metal-like transition in a field emitting nanowire. (c) 2006 American Institute of Physics.

引用

页数：3

共 7 条

[1] Synthesis of silicon carbide nano-junctions in a catalyst-assisted process [J].

Deng, SZ ;

Wu, ZS ;

Zhou, J ;

Xu, NS ;

Chen, J ;

Chen, J .

CHEMICAL PHYSICS LETTERS, 2002, 364 (5-6) :608-611

[2] Synthesis of silicon carbide nanowires in a catalyst-assisted process [J].

Deng, SZ ;

Wu, ZS ;

Zhou, J ;

Xu, NS ;

Chen, R ;

Chen, J .

CHEMICAL PHYSICS LETTERS, 2002, 356 (5-6) :511-514

[3] ZnO nanoneedles with tip surface perturbations: Excellent field emitters [J].

Li, YB ;

Bando, Y ;

Golberg, D .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3603-3605

[4] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1969, 19 (160) :835-&

[5] Needle-shaped silicon carbide nanowires: Synthesis and field electron emission properties [J].

Wu, ZS ;

Deng, SZ ;

Xu, NS ;

Chen, J ;

Zhou, J ;

Chen, J .

APPLIED PHYSICS LETTERS, 2002, 80 (20) :3829-3831

[6] Novel cold cathode materials and applications [J].

Xu, NS ;

Huq, SE .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2005, 48 (2-5) :47-189

[7] Microfabrication and characterization of gated amorphous diamond-based field emission electron sources [J].

Xu, NS ;

She, JC ;

Huq, SE ;

Chen, J ;

Deng, SZ ;

Chen, J .

ULTRAMICROSCOPY, 2001, 89 (1-3) :111-118

← 1 →