Response to "Comment on 'Low Stokes shift in thick and homogeneous InGaN epilayers' " [Appl. Phys. Lett 81, 1353 (2002)]

被引：2

作者：

Srinivasan, S ^{[1
]}

Bertram, F ^{[1
]}

Bell, A ^{[1
]}

Ponce, FA ^{[1
]}

机构：

[1] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 07期

关键词：

D O I：

10.1063/1.1498004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1355 / 1356

页数：2

共 12 条

[1]

Bertram F, 2001, PHYS STATUS SOLIDI B, V228, P35, DOI 10.1002/1521-3951(200111)228:1<35::AID-PSSB35>3.0.CO

[2]

2-1

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[8] Comment on "Low Stokes shift in thick and homogeneous InGaN epilayers" [Appl. Phys. Lett. 80, 550 (2002)] [J].

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[10] Response to "Comment on 'Low Stokes shift in thick and homogeneous InGaN epilayers' " [Appl. Phys. Lett 81, 1353 (2002)] [J].

Srinivasan, S ;

Bertram, F ;

Bell, A ;

Ponce, FA .

APPLIED PHYSICS LETTERS, 2002, 81 (07) :1355-1356

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