High-resolution mapping of infrared photoluminescence

被引:11
作者
Furstenberg, R
White, JO
Dinan, JH
Olson, GL
机构
[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
[3] USA, CECOM, RDEC, Night Vis & Elect Sensors Directorate, Ft Belvoir, VA 22060 USA
[4] HRL Labs LLC, Malibu, CA 90265 USA
关键词
optical characterization; infrared (IR) photoluminescence (PL); PL mapping; high-resolution imaging; HgCdTe; CdZnTe;
D O I
10.1007/s11664-004-0071-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report preliminary results of high-resolution scanning photoluminescence (PL) experiments in the near- and mid-infrared (IR) portions of the spectrum. The samples investigated were Hg0.7Cd0.3Te epilayers grown on Cd0.96Zn0.04Te and CdTe/Si substrates used in IR detectors and focal-plane arrays. To measure mid-IR PL, we modified a commercial, Fourier transform infrared (FTIR) spectrometer and designed a confocal microscope attachment. For near-IR PL mapping, we used a confocal microscope coupled to a grating spectrometer and a charge-couple device (CCD) camera. Diffraction-limited resolution was achieved in the near-IR setup (0.2 mum) and 22-mum resolution for the mid-IR setup.
引用
收藏
页码:714 / 718
页数:5
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