MIDDLE INFRARED PHOTOLUMINESCENCE MAPPING OF II-VI SEMICONDUCTOR WAFERS

被引：5

作者：

SCHMIDT, H

TOMM, JW

HERRMANN, KH

机构：

[1] Sektion Physik der Humboldt-Universität zu Berlin, DDR-1040 Berlin

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)91018-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Photoluminescence maps of II-VI semiconductor wafers were obtained by scanning the luminescence signal in the 2-10 μm wavelength range. The signals excited by either pulsed or cw YAG laser radiation were measured either in distinct spectral bands or without any spectral decomposition. From time resolved measurements the ratio of the intensities due to different optical transitions was deduced, if those exhibit different time constants. Hg1-xCdxTe and Hg1-xMnxTe wafers were examined by using the techniques mentioned. Further it was possible to identify tellurium inclusions in wide-gap CdTe and Cd1-xZnxTe due to the tellurium luminescence signal. © 1989.

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页码：474 / 478

页数：5

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