SPATIALLY RESOLVED ELECTRICAL AND SPECTROSCOPIC STUDIES AROUND DISLOCATIONS IN GAAS SINGLE-CRYSTALS

被引：27

作者：

WATANABE, K

NAKANISHI, H

YAMADA, K

HOSHIKAWA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.95341

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：643 / 645

页数：3

共 10 条

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[8] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J].

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[10] PHOTO-LUMINESCENCE IDENTIFICATION OF APPROXIMATELY 77-MEV DEEP ACCEPTOR IN GAAS [J].

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