Temperature dependence of GaN high breakdown voltage diode rectifiers

被引：31

作者：

Chyi, JI

Lee, CM

Chuo, CC

Cao, XA

Dang, GT

Zhang, AP

Ren, F

Pearton, SJ

Chu, SNG

Wilson, RG

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 04期

关键词：

D O I：

10.1016/S0038-1101(99)00183-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependence of reverse breakdown voltage (V-RB) and forward turn-on voltage (V-F) of GaN Schottky diode rectifiers is reported. The VRB values display a negative temperature coefficient (-0.92 V K-1 for 25-50 degrees C; -0.17 V K-1 for 50-150 degrees C), indicative of surface- or defect-assisted breakdown. The Vl;values decrease with increasing temperature. The room temperature breakdown voltage is approximately a factor of three lower than the theoretical maximum expected based on avalanche breakdown, and the current performance of GaN rectifiers is comparable to that of Si at the same on-resistance. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：613 / 617

页数：5

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