Low-temperature saturation of the dephasing time and effects of microwave radiation on open quantum dots

被引:86
作者
Huibers, AG [1 ]
Folk, JA
Patel, SR
Marcus, CM
Duruöz, CI
Harris, JS
机构
[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
关键词
D O I
10.1103/PhysRevLett.83.5090
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The dephasing time tau(phi) of electrons in open semiconductor quantum dots, measured using ballistic weak localization, is found to saturate below similar to 100 mK, roughly twice the electron base temperature, independent of dot size. Microwave radiation deliberately coupled to the dots affects quantum interference indistinguishably from elevated temperatures, suggesting that direct dephasing due to radiation is not the cause of the observed saturation. Coulomb blockade measurements show that the applied microwaves create sufficient source-drain voltages to account for dephasing due to Joule heating.
引用
收藏
页码:5090 / 5093
页数:4
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