Analysis of electrical characteristics of high performance pentacene thin-film transistors with PMMA buffer layer

被引：13

作者：

De Angelis, F. ^{[1
]}

Mariucci, L. ^{[1
]}

Cipolloni, S. ^{[1
]}

Fortunato, G. ^{[1
]}

机构：

[1] CNR, IFN, I-00156 Rome, Italy

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2006年 / 352卷 / 9-20期

关键词：

thin-film transistors; band structure; conductivity; polymers and organics;

D O I：

10.1016/j.jnoncrysol.2005.11.123

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Top contact and bottom contact TFTs, based on evaporated pentacene, have been fabricated by using PMMA as buffer layer. Both type of devices show high performance with field-effect mobility > 1 cm(2)/V s. Top contact transfer characteristics, measured at different temperatures, have been analyzed by the 'temperature method' in order to evaluate the effective density of localized states (DOS). The calculated DOS, approximated by two exponential tails, has been used in 2D numerical device analysis program to simulate the transfer and output characteristics at different temperatures. (c) 2006 Elsevier B.V. All rights reserved.

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页码：1765 / 1768

页数：4

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