Multiscale simulation of loading and electrical resistance in silicon nanoindentation

被引：96

作者：

Smith, GS ^{[1
]}

Tadmor, EB

Kaxiras, E

机构：

[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[2] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 84卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.84.1260

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Nanoindentation experiments are an excellent probe of micromechanical properties, but their interpretation is complicated by their multiscale nature. We report simulations of silicon nanoindentation, based on an extended Version of the local quasicontinuum model, capable of handling complex Bravais crystals. Our simulations reproduce the experimental load vs displacement curves and provide microscopic information such as the distribution of transformed metallic phases of silicon underneath the indenter. This information is linked to the macroscopic electrical resistance, giving a satisfactory explanation of experimental results.

引用

收藏

页码：1260 / 1263

页数：4

相关论文

共 19 条

[1] FINITE-ELEMENT SIMULATION OF INDENTATION EXPERIMENTS [J].

BHATTACHARYA, AK ;

NIX, WD .

INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 1988, 24 (09) :881-891

[2] NEW LOW-ENERGY CRYSTAL-STRUCTURE FOR SILICON [J].

BOYER, LL ;

KAXIRAS, E ;

FELDMAN, JL ;

BROUGHTON, JQ ;

MEHL, MJ .

PHYSICAL REVIEW LETTERS, 1991, 67 (06) :715-718

[3] AMORPHIZATION AND CONDUCTIVITY OF SILICON AND GERMANIUM INDUCED BY INDENTATION [J].

CLARKE, DR ;

KROLL, MC ;

KIRCHNER, PD ;

COOK, RF ;

HOCKEY, BJ .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2156-2159

[4]

Hertz B. H., 1882, J REINE ANGEW MATH, V92, P156, DOI [DOI 10.1515/CRLL.1882.92.156, 10.1515/9783112342404]

[5]

Holm R., 1967, Electric Contacts: Theory and Applications, DOI DOI 10.1007/978-3-662-06688-1

[6] Phase transformations of silicon caused by contact loading [J].

Kailer, A ;

Gogotsi, YG ;

Nickel, KG .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) :3057-3063

[7] MOLECULAR-DYNAMICS OF SILICON INDENTATION [J].

KALLMAN, JS ;

HOOVER, WG ;

HOOVER, CG ;

DEGROOT, AJ ;

LEE, SM ;

WOOTEN, F .

PHYSICAL REVIEW B, 1993, 47 (13) :7705-7709

[8] Dislocation nucleation and defect structure during surface indentation [J].

Kelchner, CL ;

Plimpton, SJ ;

Hamilton, JC .

PHYSICAL REVIEW B, 1998, 58 (17) :11085-11088

[9] Finite-element modeling of nanoindentation [J].

Knapp, JA ;

Follstaedt, DM ;

Myers, SM ;

Barbour, JC ;

Friedmann, TA .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (03) :1460-1474

[10] Micro/nanomechanical characterization of ceramic films for microdevices [J].

Li, XD ;

Bhushan, B .

THIN SOLID FILMS, 1999, 340 (1-2) :210-217