Improved stability of hydrogenated amorphous-silicon photosensitivity by ultraviolet illumination

被引：7

作者：

Branz, HM ^{[1
]}

Xu, YQ ^{[1
]}

Heck, S ^{[1
]}

Gao, W ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 18期

关键词：

D O I：

10.1063/1.1518566

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Postdeposition ultraviolet (UV) illumination, followed by etching, improves the stability of hydrogenated amorphous-silicon thin films against subsequent light-induced degradation of photosensitivity. The etch removes a heavily damaged layer extending about 100 nm below the surface, but beneath the damage, the UV has improved the stability of 200 to 300 nm of bulk film. The open-circuit voltage of Schottky solar cells is also stabilized by UV-etch treatment. Possible mechanisms are discussed. (C) 2002 American Institute of Physics.

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页码：3353 / 3355

页数：3

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