Spin-transfer effects in nanoscale magnetic tunnel junctions

被引：245

作者：

Fuchs, GD ^{[1
]}

Emley, NC

Krivorotov, IN

Braganca, PM

Ryan, EM

Kiselev, SI

Sankey, JC

Ralph, DC

Buhrman, RA

Katine, JA

机构：

[1] Cornell Univ, Ithaca, NY 14853 USA

[2] Hitachi Global Storage Technol, San Jose, CA 95120 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 07期

关键词：

D O I：

10.1063/1.1781769

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, <5 Omega mum(2), barriers. The current densities required for magnetic switching are similar to values for all-metallic spin-valve devices. In the tunnel junctions, spin-transfer-driven switching can occur at voltages that are high enough to quench the tunnel magnetoresistance, demonstrating that the current remains spin polarized at these voltages. (C) 2004 American Institute of Physics.

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页码：1205 / 1207

页数：3

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