Characterization of ferroelectricity in metal/ferroelectric/insulator/semiconductor structure by pulsed C-V measurement;: Ferroelectricity in YMnO3/Y2O3/Si structure

被引：73

作者：

Yoshimura, T ^{[1
]}

Fujimura, N ^{[1
]}

Ito, D ^{[1
]}

Ito, T ^{[1
]}

机构：

[1] Osaka Prefecture Univ, Coll Engn, Dept Appl Mat Sci, Osaka 5998531, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 07期

关键词：

D O I：

10.1063/1.372364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric properties of the metal/ferroelectric/insulator/semiconductor (MFIS) structure were investigated using the Pt/YMnO3/Y2O3/Si structure. The ferroelectric C-V hysteresis was observed for not only the Pt/YMnO3(0001)/Y2O3/Si capacitor but also the Pt/amorphousYMnO(3)/Y2O3/Si capacitor. The polarization evaluated by conventional C-V measurement should include interfacial polarization and rearrangement of the space charge together with the spontaneous polarization by ferroelectricity. To eliminate the generation of the interfacial polarization and the rearrangement of the space charge, the shorter charging time should be used to evaluate the ferroelectricity of the MFIS capacitor. Therefore, we propose the pulsed C-V measurement as a new method for evaluating the MF(I)S capacitor. (C) 2000 American Institute of Physics. [S0021-8979(00)02407-5].

引用

页码：3444 / 3449

页数：6

共 32 条

[1]

BERTAUT F, 1963, CR HEBD ACAD SCI, V256, P1958

[2]

BOKOV VA, 1964, SOV PHYS-SOL STATE, V5, P2646

[3] FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].

DEARAUJO, CAP ;

CUCHIARO, JD ;

MCMILLAN, LD ;

SCOTT, MC ;

SCOTT, JF .

NATURE, 1995, 374 (6523) :627-629

[4] Development of low dielectric constant ferroelectric materials for the ferroelectric memory field effect transistor [J].

Fujimori, Y ;

Izumi, N ;

Nakamura, T ;

Kamisawa, A ;

Shigematsu, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B) :5935-5938

[5] Application of Sr2Nb2O7 family ferroelectric films for ferroelectric memory field effect transistor [J].

Fujimori, Y ;

Izumi, N ;

Nakamura, T ;

Kamisawa, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9B) :5207-5210

[6] Growth mechanism of YMnO3 film as a new candidate for nonvolatile memory devices [J].

Fujimura, N ;

Azuma, S ;

Aoki, N ;

Yoshimura, T ;

Ito, T .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (12) :7084-7088

[7] YMnO3 and YbMnO3 thin films for FET type FeRAM application [J].

Fujimura, N ;

Yoshimura, T ;

Ito, D ;

Ito, T .

MULTICOMPONENT OXIDE FILMS FOR ELECTRONICS, 1999, 574 :237-242

[8] Epitaxially grown YMnO3 film: New candidate for nonvolatile memory devices [J].

Fujimura, N ;

Ishida, T ;

Yoshimura, T ;

Ito, T .

APPLIED PHYSICS LETTERS, 1996, 69 (07) :1011-1013

[9]

FUJIMURA N, 1998, S P 11 INT S APPL FE, P81

[10] Preparation of SrBi2Ta2O9 film at low temperatures and fabrication of a metal/ferroelectric/insulator/semiconductor field effect transistor using Al/SrBi2Ta2O9/CeO2/Si(100) structures [J].

Hirai, T ;

Fujisaki, Y ;

Nagashima, K ;

Koike, H ;

Tarui, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B) :5908-5911

← 1 2 3 4 →